Graphene

It is believed that, based on a graph, you can build a ballistic transistor. In March 2006 a group of researchers from the Georgia Institute of Technology announced that they have been received at the field-effect transistor grafene, as well as quantum interference device. Researchers believe that, through their achievements in a short time a new class of nanoelectronics grafenovoy the base thickness of the transistors to 10 nanometers. This transistor has a large current leakage, it is not divide the two states with closed and open channels.

Use a direct box when creating a field-effect transistors with leakage currents is not possible due to the absence of the band gap in this material because you can not make a substantial difference in the resistance at any voltage applied to the gate, that is, does not ask two of the state suitable for a binary logic: conducting and noncinductive . First you need to create some kind of forbidden zone of sufficient width at the working temperature (in order to thermally excited carriers gave a small contribution to the conductivity). One possible way proposed in. In this article we propose to create a thin strip with a width of a graph, due to quantum size effects the width of the band gap was enough to move to the dielectric state (closed state) apparatus at room temperature (28 MeV corresponds to the width of stripes 20 nm). With its high mobility (meaning that the higher mobility than in silicon, used in microelectronics) 104 cm2 V-1 s-1 speed of the transistors will be substantially higher. Despite the fact that this device is already capable of working as a transistor gate it has not yet been established.

Other uses suggested in the article and is to use a graph as a very sensitive sensor to detect individual molecules of the chemicals attached to the film surface. In this work we investigated substances such as NH3, CO, H2O, NO2. Sensor size 1 mm x 1 mm was used for detection of individual molecules of NO2 accession to grafenu. The principle of this sensor is that the different molecules can act as donors and acceptors, which in turn leads to a change in resistance of a graph. In theoretically investigated the influence of different impurities (used in the experiment outlined above) on the conductivity graph. In it was shown that the NO2 molecule is a good acceptors because of their paramagnetic properties, and creates a diamagnetic molecule N2O4 level close to the point elektroneytralnosti. In general, the impurities, molecules which have a magnetic moment (unpaired electrons), have stronger alloying properties.